1 datasheet: CPW2-0650-S006B rev. a, 02-2017 CPW2-0650-S006B silicon carbide schottky diode chipz -rec ? rectifier features ? 650-volt schottky rectiier ? zero reverse recovery ? zero forward recovery ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coeficient on v f chip outline part number die size anode cathode CPW2-0650-S006B 1.55 x 1.55 al ni/ag v rrm = 650 v i f(avg) = 6 a q c = 15 nc maximum ratings symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 650 v v rsm surge peak reverse voltage 650 v v r dc peak blocking voltage 650 v i f continuous forward current 19 96 a t c =25?c t c =135?c t c =154?c 1 i frm repetitive peak forward surge current 3020 a t c =25?c, t p = 10 ms, half sine wave t c =110?c, t p = 10 ms, half sine wave 1 i fsm non-repetitive peak forward surge current 6349 a t c =25?c, t p = 10 ms, half sine wave t c =110?c, t p = 10 ms, half sine wave 1 i f,max non-repetitive peak forward surge current 540460 a t c =25?c, t p = 10 s, pulse t c =110?c, t p = 10 s, pulse dv/dt diode dv/dt ruggedness 200 v/ns v r =0-650v i 2 dt i 2 t value 2012 a 2 s t c =25?c, t p =10 ms t c =110?c, t p =10 ms 1 t j , t stg operating junction and storage temperature -55 to +175 ?c t proc maximum processing temperature 325 ?c 10 min. maximum 1. assumes r jc thermal resistance of 1.7?c/w or less downloaded from: http:/// subject to change without notice. www.cree.com/power
2 CPW2-0650-S006B rev. a, 02-2017 electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.52.0 1.72.4 v i f = 6 a t j =25c i f = 6 a t j =175c fig. 1 i r reverse current 8 15.5 40 160 a v r = 650 v t j =25c v r = 650 v t j =175c fig. 2 q c total capacitive charge 15 nc v r = 400 v, i f = 6 a d i /d t = 500 a/s t j = 25c fig. 3 c total capacitance 295 28.525.5 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz fig. 4 e c capacitance stored energy 2.3 j v r = 400 v mechanical parameters parameter typ. unit die size 1.55 x 1.55 mm anode pad size 1.29 x 1.29 mm anode pad opening 1.08 x 1.08 mm thickness 377 10% m wafer size 100 mm anode metalization (al) 4 m cathode metalization (ni/ag) 1.8 m frontside passivation polyimide downloaded from: http:///
3 CPW2-0650-S006B rev. a, 02-2017 figure 1. forward characteristics figure 2. reverse characteristics typical characteristics figure 3. total capacitance charge vs. reverse voltage figure 4. capacitance vs. reverse voltage 10 15 20 25 capacitive charge, q c (nc) conditions: t j = 25 c 0 5 0 100 200 300 400 500 600 700 capacitive charge, q reverse voltage, v r (v) 150 200 250 300 350 capacitance (pf) conditions: t j = 25 c f test = 1 mhz v test = 25 mv 0 50 100 0 1 10 100 1000 capacitance (pf) reverse voltage, v r (v) c (pf) v r (v) q c (nc) v r (v) 8 12 16 20 reverse leakage current, i rr (ma) t j = 175 c t j = 125 c t j = 75 c t = 25 c 0 4 0 100 200 300 400 500 600 700 800 900 1000 reverse leakage current, i reverse voltage, v r (v) t j = -55 c t j = 25 c 6 8 10 12 14 foward current, i f (a) t j = -55 c t j = 25 c t j = 75 c t j = 175 c t j = 125 c 0 2 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 foward current, i foward voltage, v f (v) i f (a) v f (v) v r (v) i r ( m a) downloaded from: http:///
4 4 CPW2-0650-S006B rev. a, 02-2017 cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree repre- sentative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemical agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac dei brillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air trafic control sy stems. notes ? cree sic schottky diode portfolio: http://www.wolfspeed.com/power/products#sicschottkydiodes ? schottky diode spice models: http://www.wolfspeed.com/power/tools-and-support/diode-model-request2 ? sic mosfet and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i related links chip dimensions symbol dimension mm inch a 1.55 0.061 b 1.29 0.051 a a b b downloaded from: http:///
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